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| 型號(hào)： | EN25P10-100VCP |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁(yè)數(shù)： | 20/31頁(yè) |
| 文件大?。?/td> | 399K |
| 代理商： | EN25P10-100VCP |
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Power-up Timing
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/5/4
EN25P10
Figure 19. Power-up Timing
Table 7. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min.
Max.
Unit
tVSL(1)
VCC(min) to CS# low
10
μs
tPUW(1)
Time delay to Write instruction
1
10
ms
VWI(1)
Write Inhibit Voltage
1
2.5
V
Note:
1.The parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The
Status Register contains 00h (all Status Register bits are 0).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN25P10-100VI | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-100VIP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-50GC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-50GCP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-50GI | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN25P10-100VI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-100VIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-50GC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-50GCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-50GI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Mbit Uniform Sector, Serial Flash Memory |
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