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參數(shù)資料
| 型號： | EN25P10-50VCP |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 14/31頁 |
| 文件大?。?/td> | 399K |
| 代理商： | EN25P10-50VCP |
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This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/5/4
EN25P10
Sector Erase (SE) (D8h)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code, and three address bytes on Serial Data Input (DI). Any address inside the Sector (see Table 2.a and
Table 2.b) is a valid address for the Sector Erase (SE) instruction. Chip Select (CS#) must be driven Low
for the entire duration of the sequence.
The instruction sequence is shown in Figure 12.. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose duration
is t
SE
) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check
the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed
Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,
the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect (BP1, BP0) bits
(see Table 3.a and Table 3.b) is not executed.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN25P10-50VI | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-50VIP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-75GC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-75GCP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-75GI | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN25P10-50VI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-50VIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-75GC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-75GCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Mbit Uniform Sector, Serial Flash Memory |
| EN25P10-75GI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:1 Mbit Uniform Sector, Serial Flash Memory |
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