參數(shù)資料
型號(hào): EN29LV640H-90BC
廠商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
中文描述: 64兆位(4米× 16位),3.0伏的CMOS只,統(tǒng)一部門快閃記憶體
文件頁(yè)數(shù): 33/45頁(yè)
文件大小: 440K
代理商: EN29LV640H-90BC
Test Conditions
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/01/23
EN29LV640
Test Specifications
.
Key to Switching Waveforms
Test Conditions
90
Unit
Output Load
1 TTL Gate
Output Load Capacitance, C
B
L
B
30
pF
Input Rise and Fall times
5
ns
Input Pulse Levels
0.0-3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
0.5V
IO
V
Device under Test
C
L
6.2 k
Ω
2.7 k
Ω
3.3 V
Note: Diodes are IN3064 or equivalent
相關(guān)PDF資料
PDF描述
EN29LV640H-90BCP 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90BI 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90BIP 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90TC 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90TCP 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
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