參數(shù)資料
型號： EN29LV640H-90TC
廠商： Eon Silicon Solution Inc.
英文描述： 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
中文描述： 64兆位（4米× 16位），3.0伏的CMOS只，統(tǒng)一部門快閃記憶體
文件頁數(shù)： 14/45頁
文件大?。?/td> 440K
代理商： EN29LV640H-90TC
COMMON FLASH INTERFACE (CFI)
The common flash interface (CFI) specification outlines device and host systems software
interrogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-
independent, and forward- and backward-compatible for the specified flash device families. Flash
vendors can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h, any time the device is ready to read array data.
The system can read CFI information at the addresses given in Tables 5-8.The upper address bits
(A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the reset
command.
The system can also write the CFI query command when the device is in the autoselect mode. The
device enters the CFI query mode and the system can read CFI data at the addresses given in
Tables 5–8. The system must write the reset command to return the device to the autoselect mode.
Table 5. CFI Query Identification String
Addresses
Data
10h
11h
12h
0059h
13h
14h
0000h
15h
16h
0000h
17h
18h
0000h
19h
1Ah
0000h
Table 6. System Interface String
Addresses
Data
0027h
Vcc Min (write/erase)
DQ7-DQ4: volt, DQ3 –DQ0: 100 millivolt
0036h
Vcc Max (write/erase)
DQ7-DQ4: volt, DQ3 –DQ0: 100 millivolt
1Dh
0000h
Vpp Min. voltage (00h = no Vpp pin present)
1Eh
0000h
Vpp Max. voltage (00h = no Vpp pin present)
1Fh
0003h
Typical timeout per single byte/word write 2
P
N
20h
0000h
Typical timeout for Min, size buffer write 2
P
N
21h
000Ah Typical timeout per individual block erase 2
P
N
22h
0000h
Typical timeout for full chip erase 2
P
N
23h
0005h
Max. timeout for byte/word write 2
P
N
24h
0000h
Max. timeout for buffer write 2
P
N
25h
0002h
Max. timeout per individual block erase 2
P
N
26h
0000h
Max timeout for full chip erase 2
P
N
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/01/23
EN29LV640
Description
0051h
0052h
Query Unique ASCII string “QRY”
0002h
Primary OEM Command Set
0040h
Address for Primary Extended Table
0000h
Alternate OEM Command set (00h = none exists)
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Description
1Bh
1Ch
P
μ
S
P
μ
S (00h = not supported)
P
ms
P
ms (00h = not supported)
P
times typical
P
times typical
P
times typical
P
times typical (00h = not supported)
相關(guān)PDF資料
PDF描述
EN29LV640H-90TCP 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90TI 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90TIP 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640L-90BC 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640L-90BCP 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
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