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參數(shù)資料
| 型號： | EN29LV640L-90BI |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 64兆位（4米× 16位），3.0伏的CMOS只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 10/45頁 |
| 文件大?。?/td> | 440K |
| 代理商： | EN29LV640L-90BI |
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USER MODE DEFINITIONS
TABLE 3. BUS OPERATIONS
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/01/23
EN29LV640
Operation
CE#
OE#
WE#
RESET#
WP#/ACC
A21-A0
DQ15-DQ0
Read
L
L
H
H
L / H
A
B
IN
B
D
B
OUT
B
Write
L
H
L
H
(Note 1)
A
B
IN
B
(Note 3)
B
Accelerated
Program
L
H
L
H
V
B
HH
B
A
B
IN
B
(Note 3)
B
CMOS Standby
V
B
cc
0.3V
B
±
X
X
V
B
cc
0.3V
B
±
H
X
High-Z
TTL Standby
H
X
X
H
L / H
X
High-Z
Output Disable
L
H
H
H
L / H
X
High-Z
Hardware Reset
X
X
X
L
L / H
X
High-Z
Sector Group
Protect (Note 2)
L
H
L
V
B
ID
B
H
SA,
A6=L,
A1=H,
A0=L
SA,
A6=H,
A1=H,
A0=L
(Note 3)
Sector Group
Unprotect
(Note 2)
L
H
L
V
B
ID
B
H
(Note 3)
Temporary
Sector
Unprotect
Group
X
X
X
V
B
ID
B
H
A
B
IN
B
(Note 3)
L=logic low= V
B
IL
L or H, but not floating!), SA=Sector Addresses (A21-A15), D
B
IN
A
B
IN
B
, H=Logic High= V
B
IH
B
, V
B
ID
B
= V
HH
= 11
±
0.5V = 10.5
─
11.5V, X=Don’t Care (either
B
=Data In, D
B
OUT
B
=Data Out,
B
=Address In
Notes:
1. If the system asserts
V
B
on the WP# / ACC pin, the device disables program and erase
functions in the first or last sector independent of whether those sectors were protected or
unprotected; if the system asserts
V
B
IH
on the WP# /ACC pin, the device reverts to whether the
first or last sector was previously protected or unprotected. If WP# / ACC =
V
B
HH
be unprotected.
B
, all sectors will
2. Please refer to “Sector Group Protection & Unprotection”, Flowchart 6a and Flowchart 6b.
3. D
IN
or D
OUT
as required by command sequence, data polling, or sector protect algorithm.
Read Mode
The device is automatically set to reading array data after device power-up or hardware reset. No
commands are required to retrieve data. The device is also ready to read array data after completing an
Embedded Program or Embedded Erase algorithm
After the device accepts an Sector Erase Suspend command, the device enters the Sector Erase
Suspend mode. The system can read array data using the standard read timings, except that if it reads
at an address within erase-suspended sectors, the device outputs status data. After completing a
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PDF描述 |
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| EN29LV640L-90BIP | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640L-90TC | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640L-90TCP | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640L-90TI | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640L-90TIP | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
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