參數(shù)資料
型號: EN29LV640L-90TIP
廠商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
中文描述: 64兆位(4米× 16位),3.0伏的CMOS只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 25/45頁
文件大?。?/td> 440K
代理商: EN29LV640L-90TIP
EMBEDDED ALGORITHMS
Flowchart 1. Embedded Chip Erase
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/01/23
EN29LV640
START
Write Data AAh to Address 555h
Write Data 55h to Address 2AAh
Write Data 80h to Address 555h
Write Data AAh to Address 555h
Data Poll from System
DATA = FFh
Erasure Completed
Yes
No
Write Data 55h to Address 2AAh
Write Data 10h to Address 555h
Embedded
Chip Erase
in progress
相關(guān)PDF資料
PDF描述
EN29LV800AB-90BCP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800A 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-55RBC 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-55RBCP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-55RBI 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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