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參數(shù)資料
| 型號： | EN29LV800AB-55RBCP |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 8兆位（1024K × 8位/為512k × 16位）閃存引導扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁數(shù)： | 17/41頁 |
| 文件大?。?/td> | 370K |
| 代理商： | EN29LV800AB-55RBCP |
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Table 6. Status Register Bits
DQ
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/10
EN29LV800A
Name
Logic Level
Definition
Erase Complete or
erase Sector in Erase suspend
Erase On-Going
Program Complete or
data of non-erase Sector
during Erase Suspend
Program On-Going
Erase or Program On-going
Read during Erase Suspend
Erase Complete
Program or Erase Error
Program or Erase On-going
Erase operation start
Erase timeout period on-going
Chip Erase, Sector Erase or
Erase suspend on currently
addressed
Sector. (When DQ5=1, Erase
Error due to currently
addressed Sector. Program
during Erase Suspend on-
going at current address
‘1’
‘0’
DQ7
7
DATA#
POLLING
DQ7#
‘-1-0-1-0-1-0-1-’
DQ6
6
TOGGLE
BIT
‘-1-1-1-1-1-1-1-‘
‘1’
‘0’
‘1’
‘0’
5
ERROR BIT
3
ERASE
TIME BIT
‘-1-0-1-0-1-0-1-’
2
TOGGLE
BIT
DQ2
Erase Suspend read on
non Erase Suspend Sector
Notes:
DQ7 DATA# Polling: indicates the P/E C status check during Program or Erase, and on completion before checking bits DQ5
for Program or Erase Success.
DQ6 Toggle Bit: remains at constant level when P/E operations are complete or erase suspend is acknowledged.
Successive reads output complementary data on DQ6 while programming or Erase operation are on-going.
DQ5 Error Bit: set to “1” if failure in programming or erase
DQ3 Sector Erase Command Timeout Bit: Operation has started. Only possible command is Erase suspend (ES).
DQ2 Toggle Bit: indicates the Erase status and allows identification of the erased Sector.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV800AB-55RBI | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AB-55RBIP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AB-55RTC | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AB-55RTCP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AB-55RTI | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV800AB-70TC | 制造商:Eon Silicon Solution Inc 功能描述: |
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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