參數(shù)資料
型號: EN29LV800AB-55RTC
廠商: Eon Silicon Solution Inc.
英文描述: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 8兆位(1024K × 8位/為512k × 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 18/41頁
文件大?。?/td> 370K
代理商: EN29LV800AB-55RTC
EMBEDDED ALGORITHMS
Flowchart 1. Embedded Program
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/10
EN29LV800A
START
Write Program
Command Sequence
(shown below)
Data# Poll Device
Last
Address
Programming Done
Increment
Address
No
Yes
Verify Data
Flowchart 2. Embedded Program Command Sequence
See the Command Definitions section for more information on WORD mode.
2AAH / 55H
555H / AAH
555H / A0H
PROGRAM ADDRESS / PROGRAM DATA
相關(guān)PDF資料
PDF描述
EN29LV800AB-55RTCP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-55RTI 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-55RTIP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-70BC 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-70BCP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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