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參數(shù)資料
| 型號(hào)： | EN29LV800AB-70BI |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 8兆位（1024K × 8位/為512k × 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁數(shù)： | 15/41頁 |
| 文件大?。?/td> | 370K |
| 代理商： | EN29LV800AB-70BI |
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the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied
together in parallel with a pull-up resistor to Vcc.
In the output-low period, signifying Busy, the device is actively erasing or programming. This
includes programming in the Erase Suspend mode. If the output is high, signifying the Ready, the
device is ready to read array data (including during the Erase Suspend mode), or is in the standby
mode.
DQ6: Toggle Bit I
The EN29LV800A provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the
embedded programming and erase operations. (See Table 6)
During an embedded Program or Erase operation, successive attempts to read data from the device
at any address (by active OE# or CE#) will result in DQ6 toggling between “zero” and “one”. Once
the embedded Program or Erase operation is completed, DQ6 will stop toggling and valid data will
be read on the next successive attempts. During embedded Programming, the Toggle Bit is valid
after the rising edge of the fourth WE# pulse in the four-cycle sequence. During Erase operation, the
Toggle Bit is valid after the rising edge of the sixth WE# pulse for sector erase or chip erase.
In embedded Programming, if the sector being written to is protected, DQ6 will toggles for about 2
μ
s, then stop toggling without the data in the sector having changed. In Sector Erase or Chip Erase,
if all selected sectors are protected, DQ6 will toggle for about 100
μ
s. The chip will then return to the
read mode without changing data in all protected sectors.
The flowchart for the Toggle Bit (DQ6) is shown in Flowchart 6. The Toggle Bit timing diagram is
shown in Figure 9
.
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count
limit. Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the
program or erase cycle was not successfully completed. Since it is possible that DQ5 can become a
1 when the device has successfully completed its operation and has returned to read mode, the user
must check again to see if the DQ6 is toggling after detecting a “1” on DQ5.
The DQ5 failure condition may appear if the system tries to program a “1” to a location that is
previously programmed to “0.”
Only an erase operation can change a “0” back to a “1.”
Under
this condition, the device halts the operation, and when the operation has exceeded the timing limits,
DQ5 produces a “1.” Under both these conditions, the system must issue the reset command to
return the device to reading array data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the output on DQ3 can be used to determine
whether or not an erase operation has begun. (The sector erase timer does not apply to the chip
erase command.) When sector erase starts, DQ3 switches from “0” to “1.” This device does not
support multiple sector erase command sequences so it is not very meaningful since it immediately
shows as a “1” after the first 30h command. Future devices may support this feature.
DQ2: Erase Toggle Bit II
The “Toggle Bit” on DQ2, when used with DQ6, indicates whether a particular sector is actively
erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-
suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command
sequence. DQ2 toggles when the system reads at addresses within those sectors that have been
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/10
EN29LV800A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV800AB-70BIP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AB-70TC | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AB-70TCP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AB-70TI | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AB-70TIP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV800AB-70TC | 制造商:Eon Silicon Solution Inc 功能描述: |
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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