參數(shù)資料
型號: EN29LV800AB-70TC
廠商: Eon Silicon Solution Inc.
英文描述: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 8兆位(1024K × 8位/為512k × 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 20/41頁
文件大?。?/td> 370K
代理商: EN29LV800AB-70TC
Flowchart 5. DATA# Polling
Algorithm
Notes:
(1) This second read is necessary in case the
first read was done at the exact instant when
the status data was in transition.
Flowchart 6. Toggle Bit Algorithm
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/10
EN29LV800A
No
No
DQ7 = Data
DQ5 = 1
DQ7 = Data
Yes
Yes
No
Yes
Read Data
Start
Read Data (1)
Fail
Pass
No
Yes
DQ6 = Toggle
DQ5 = 1
DQ6 = Toggle
No
No
Yes
Yes
Read Data twice
Start
Read Data twice (2)
Fail
Pass
Notes:
(2) This second set of reads is necessary in case
the first set of reads was done at the exact
instant when the status data was in transition.
相關(guān)PDF資料
PDF描述
EN29LV800AB-70TCP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-70TI 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-70TIP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-90BC 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-90BI 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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