參數資料
型號: EN29LV800AB-90BI
廠商: Eon Silicon Solution Inc.
英文描述: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 8兆位(1024K × 8位/為512k × 16位)閃存引導扇區(qū)閃存,CMOS 3.0伏,只
文件頁數: 21/41頁
文件大?。?/td> 370K
代理商: EN29LV800AB-90BI
Flowchart 7a. In-System Sector Protect Flowchart
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/10
EN29LV800A
RESET# = V
ID
Wait 1
μ
s
First Write
Cycle =
60h
No
Temporary Sector
Unprotect Mode
Yes
Set up sector
address
Sector Protect: Write 60h
to sector addr with
A6 = 0, A1 = 1, A0 = 0
Wait 150
μ
s
Verify Sector Protect:
Write 40h to sector
address with
A6 = 0, A1 = 1, A0 = 0
Wait 0.4
μ
s
Read from sector
address with
A6 = 0, A1 = 1, A0
Data = 01h
No
PLSCNT = 25
Increment
PLSCNT
No
Device failed
Yes
Protect another
sector
No
Yes
Sector Protect
complete
Write reset
command
Remove V
from RESET#
Yes
Reset
PLSCNT = 1
PLSCNT = 1
START
Sector Protect
Algorithm
相關PDF資料
PDF描述
EN29LV800AB-90BIP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-90TC 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-90TCP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-90TI 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800AB-90TIP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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