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| 型號(hào)： | EN29LV800AB-90TC |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 8兆位（1024K × 8位/為512k × 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁(yè)數(shù)： | 30/41頁(yè) |
| 文件大?。?/td> | 370K |
| 代理商： | EN29LV800AB-90TC |
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Table 11. ERASE AND PROGRAMMING PERFORMANCE
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/10
EN29LV800A
Limits
Max
Parameter
Typ
Unit
Comments
Sector Erase Time
0.5
10
sec
Chip Erase Time
8
sec
Excludes 00H programming prior
to erasure
Byte Programming Time
8
300
μs
Word Programming Time
8
300
μs
Byte
8.4
25.2
Chip Programming
Time
Word
4.2
12.6
sec
Excludes system level overhead
Erase/Program Endurance
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to V
ss
on all pins except I/O pins
(including A9, Reset and OE#)
100K
cycles
Minimum 100K cycles
Min
Max
-1.0 V
12.0 V
Input voltage with respect to V
ss
on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note :
These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 14. 48-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
C
IN
Input Capacitance
Test Setup
V
IN
= 0
Typ
Max
Unit
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Table 15. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Minimum Pattern Data Retention Time
125°C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV800AB-90TCP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AB-90TI | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AB-90TIP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AT-55RBC | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800AT-55RBCP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
| EN2-B1H1S | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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