參數(shù)資料
型號: EN29LV800AT-90BIP
廠商: Eon Silicon Solution Inc.
英文描述: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 8兆位(1024K × 8位/為512k × 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 34/41頁
文件大?。?/td> 370K
代理商: EN29LV800AT-90BIP
Figure 10. Alternate CE#
Controlled Write Operation Timings
SA for Sector Erase
0x555 for Chip Erase
0x2AA for Erase
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
D
out
= array data read at VA
Shown above are the last two cycles of the program or erase command sequence and the last status read cycle
Reset# shown to illustrate t
RH
measurement references. It cannot occur as shown during a valid command
sequence.
Figure 11. DQ2 vs. DQ6
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/10
EN29LV800A
PA for Program
0x555 for Program
DQ2
WE#
DQ6
Enter
Embedded
Erase
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Resume
Erase
Enter
Suspend
Read
Enter
Suspend
Program
Erase
Erase
Complete
Erase
Suspend
Read
VA
D
OUT
Status
t
WC
Reset#
RY/BY#
Data
CE#
OE#
WE#
Addresses
t
RH
t
AS
t
AH
t
WH
t
CPH
t
CP
t
DH
t
DS
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
0xA0 for
Program
t
BUSY
t
CWHWH1
/ t
CWHWH2
/ t
CWHWH3
t
WS
t
GHEL
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