參數(shù)資料
型號(hào): EN29LV800AT-90TC
廠商: Eon Silicon Solution Inc.
英文描述: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 8兆位(1024K × 8位/為512k × 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁(yè)數(shù): 24/41頁(yè)
文件大?。?/td> 370K
代理商: EN29LV800AT-90TC
Test Conditions
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/10
EN29LV800A
3.3 V
Device Under Test
Note: Diodes are IN3064 or equivalent
2.7 k
6.2 k
C
L
Test Specifications
Test Conditions
Output Load
Output Load Capacitance, C
L
Input Rise and Fall times
Input Pulse Levels
Input timing measurement
reference levels
Output timing measurement
reference levels
-55R
-70
-90
Unit
pF
ns
V
1 TTL gate
100
5
0.0-3.0
30
5
100
5
0.0-3.0
0.0-3.0
1.5
1.5
1.5
V
1.5
1.5
1.5
V
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