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參數(shù)資料
| 型號(hào)： | EN29LV800B70RS |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Replaced by PTH04070W : |
| 中文描述： | 8兆位（1024K × 8位/為512k × 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁數(shù)： | 7/43頁 |
| 文件大?。?/td> | 239K |
| 代理商： | EN29LV800B70RS |
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EN29LV800
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
7
Rev 0.4 Release Date: 2002/01/29
USER MODE DEFINITIONS
Word / Byte Configuration
The signal set on the BYTE# Pin controls whether the device data I/O pins DQ15-DQ0 operate in the
byte or word configuration. When the Byte# Pin is set at logic ‘1’, then the device is in word
configuration, DQ15-DQ0 are active and are controlled by CE# and OE#.
On the other hand, if the Byte# Pin is set at logic ‘0’, then the device is in byte configuration, and only
data I/O pins DQ0-DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8-DQ14
are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
Standby Mode
The EN29LV800 has a CMOS-compatible standby mode, which reduces the
current to
<
1μA
(typical). It is placed in CMOS-compatible standby when the
CE
pin is at V
CC
±
0.5. RESET# and
BYTE# pin must also be at CMOS input levels. The device also has a TTL-compatible standby mode,
which reduces the maximum V
CC
current to < 1mA. It is placed in TTL-compatible standby when the
CE
pin is at V
IH
. When in standby modes, the outputs are in a high-impedance state independent of
the
OE
input.
Read Mode
The device is automatically set to reading array data after device power-up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The
system can read array data using the standard read timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status data. After completing a programming operation in
the Erase Suspend mode, the system may once again read array data with the same exception. See
“Erase Suspend/Erase Resume Commands” for more additional information.
The system
must
issue the reset command to re-enable the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the “Reset Command” additional details.
Output Disable Mode
When the
CE
or
OE
pin is at a logic high level (V
IH
), the output from the EN29LV800 is disabled.
The output pins are placed in a high impedance state.
Auto Select Identification Mode
The autoselect mode provides manufacturer and device identification, and sector protection
verification, through identifier codes output on DQ15
–DQ0. This mode is primarily intended for
programming equipment to automatically match a device to be programmed with its corresponding
programming algorithm. However, the autoselect codes can also be accessed in-system through the
command register.
When using programming equipment, the autoselect mode requires V
ID
(10.5 V to 11.5 V) on
address pin A9. Address pins A8, A6, A1, and A0 must be as shown in Autoselect Codes table. In
addition, when verifying sector protection, the sector address must appear on the appropriate highest
order address bits. Refer to the corresponding Sector Address Tables. The Command Definitions
table shows the remaining address bits that are don’t-care. When all necessary bits have been set as
required, the programming equipment may then read the corresponding identifier code on DQ15–
DQ0.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV800B70RSI | Replaced by PTH04070W : |
| EN29LV800B70RSP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B70RT | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B70RTI | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B90S | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
| EN2-B1H1S | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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