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| 型號： | EN29LV800B90S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 8兆位（1024K × 8位/為512k × 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁數(shù)： | 10/43頁 |
| 文件大小： | 239K |
| 代理商： | EN29LV800B90S |
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EN29LV800
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
10
Rev 0.4 Release Date: 2002/01/29
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the
following hardware data protection measures prevent accidental erasure or programming, which
might otherwise be caused by false system level signals during Vcc power up and power down
transitions, or from system noise.
Low V
CC
Write Inhibit
When Vcc is less than V
LKO
, the device does not accept any write cycles. This protects data during
Vcc power up and power down. The command register and all internal program/erase circuits are
disabled, and the device resets. Subsequent writes are ignored until Vcc is greater than V
LKO
. The
system must provide the proper signals to the control pins to prevent unintentional writes when Vcc is
greater than V
LKO
.
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on
OE
,
CE
or
W E
do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of
OE
= VIL,
CE
= VIH,
or
W E
= VIH
. To initiate a
write cycle,
CE
and
W E
must be a logical zero while
OE
is a logical one. If
CE
,
W E
, and
OE
are all logical zero (not recommended usage), it will be considered a read.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with
CE
= V
IL
,
WE
= V
IL
and
OE
= V
IH
, the device will not accept commands on the rising edge of
W E
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV800B90SI | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B90SIP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B90SP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B90T | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B90TI | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
| EN2-B1H1S | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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