參數(shù)資料
型號(hào): EN29LV800B90TIP
廠商: Electronic Theatre Controls, Inc.
英文描述: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 8兆位(1024K × 8位/為512k × 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 1/43頁
文件大?。?/td> 239K
代理商: EN29LV800B90TIP
EN29LV800
FEATURES
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
1
Rev 0.4 Release Date: 2002/01/29
Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors.
Manufactured on 0.28 μm process technology
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
μ
A typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword
and fifteen 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
GENERAL DESCRIPTION
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
High performance program/erase speed
- Byte/Word program time: 8μs typical
- Sector erase time: 500ms typical
JEDEC Standard program and erase
commands
JEDEC standard
DATA
polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
0.28 μm double-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 2.5V
>100K program/erase endurance cycle
48-pin TSOP (Type 1)
Commercial Temperature Range
The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10μs.
The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV800 has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector
or full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
EN29LV800
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
相關(guān)PDF資料
PDF描述
EN29LV800B90TP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800T70RS 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800T70RSI 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800T70RSIP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800T70RSP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29LV800BB-70TCP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash
EN29LV800CT-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash
EN29SL400B-90BIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash
EN2-B1H1 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays
EN2-B1H1S 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays