參數(shù)資料
型號: EN29LV800T70RTI
廠商: Electronic Theatre Controls, Inc.
英文描述: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 8兆位(1024K × 8位/為512k × 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 11/43頁
文件大?。?/td> 239K
代理商: EN29LV800T70RTI
EN29LV800
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
11
Rev 0.4 Release Date: 2002/01/29
COMMAND DEFINITIONS
The operations of the EN29LV800 are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register. The sequences for the
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,
incorrect data values or improper sequences will reset the device to Read Mode.
Table 5. EN29LV800 Command Definitions
Bus Cycles
1
st
Write Cycle
Add
RA
xxx
2
nd
Write Cycle
Add
3
rd
Write Cycle
Add
4
th
Write Cycle
Add
000/
001
000/
001
X01
X02
X01
X02
(SA)
X02
(SA)
X04
5
th
Write Cycle
Add
6
th
Write Cycle
Add
Command
Sequence
C
Data
RD
F0
Data
Data
Data
7F/
1C
7F/
1C
22DA
DA
225B
5B
XX00
XX01
00
01
Data
Data
Read
Reset
1
1
Word
555
2AA
555
Manufacturer
ID
Byte
4
AAA
AA
555
55
AAA
90
Word
Byte
Word
Byte
555
AAA
555
AAA
2AA
555
2AA
555
2AA
555
AAA
555
AAA
Device ID
Top Boot
Device ID
Bottom Boot
4
AA
55
90
4
AA
55
90
Word
555
555
A
Sector Protect
Verify
Byte
4
AAA
AA
555
55
AAA
90
Word
Byte
Word
Byte
555
AAA
555
AAA
XXX
XXX
555
AAA
555
AAA
xxx
xxx
2AA
555
2AA
555
PA
XXX
2AA
555
2AA
555
555
AAA
555
AAA
555
AAA
555
AAA
Program
4
AA
55
A0
PA
PD
Unlock Bypass
3
AA
55
20
Unlock Bypass Program
Unlock Bypass Reset
2
2
A0
90
PD
00
555
AAA
555
AAA
2AA
555
2AA
555
555
AAA
Word
Byte
Word
Byte
Chip Erase
6
AA
55
80
AA
55
10
Sector Erase
6
AA
55
80
AA
55
SA
30
Erase Suspend
Erase Resume
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A18-A12 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array
data using the standard read timings, with the only difference in that if it reads at an address within erase
suspended sectors, the device outputs status data. After completing a programming operation in the
Erase Suspend mode, the system may once again read array data with the same exception.
1
1
B0
30
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