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| 型號： | EN29LV800T90T |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 8兆位（1024K × 8位/為512k × 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁數(shù)： | 35/43頁 |
| 文件大?。?/td> | 239K |
| 代理商： | EN29LV800T90T |
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EN29LV800
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
35
Rev 0.4 Release Date: 2002/01/29
Figure 10. Alternate CE#
Controlled Write Operation Timings
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
D
out
= array data read at VA
Shown above are the last two cycles of the program or erase command sequence and the last status read
cycle
Reset# shown to illustrate t
RH
measurement references. It cannot occur as shown during a valid command
sequence.
Figure 11. DQ2 vs. DQ6
WE#
DQ6
DQ2
Enter
Embedded
Erase
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Resume
Erase
Enter
Suspend
Read
Enter
Suspend
Program
Erase
Erase
Complete
Erase
Suspend
Read
t
WC
t
RH
t
AS
t
AH
t
WH
t
GHEL
t
CPH
t
CP
t
WS
t
DH
t
DS
t
BUSY
t
CWHWH1
/ t
CWHWH2
/ t
CWHWH3
Status
D
OUT
0xA0 for Program
0x55 for Erase
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
VA
Addresses
WE#
OE#
CE#
Data
RY/BY#
Reset#
PA for Program
SA for Sector Erase
0x555 for Chip Erase
0x555 for Program
0x2AA for Erase
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV800T90TI | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800T90TIP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800T90TP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800BB-55RBC | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
| EN2-B1H1S | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
| EN2-B1H1ST | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
| EN2-B1H1T | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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