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| 型號： | EN29LV800T90TI |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 8兆位（1024K × 8位/為512k × 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁數(shù)： | 42/43頁 |
| 文件大小： | 239K |
| 代理商： | EN29LV800T90TI |
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EN29LV800
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
42
Rev 0.4 Release Date: 2002/01/29
Revisions List
0.1 (2001.07.03):
Preliminary version
0.2 (2001.07.05):
“block” changed to “sector”
LACTHUP >= 200mA line removed from first page
Chip erase and Sector Erase command descriptions modified.
DQ7,DQ5,DQ3 status polling descriptions modified.
Table 12 Latchup characteristics modified
Changed P/E endurance to 100K everywhere
Changed Absolute Maximum Ratings
Unlock Bypass stuff added
0.3 (2001.08.23):
On Table 7. DC Characteristics, changed:
“Vcc=2.7-3.6V +/- 10%” to “Vcc=2.7-3.6V”
VOH(TTL) Min “2.4” changed to “0.85 x Vcc”
Table 8: input/output levels changed in notes.
0.4 (2001.09.26):
Added in the Automatic Sleep Mode in User Mode Definitions section.
Re-Wrote the Write Mode in User Mode Definitions section.
Corrected the address range (A0 – A18) in Table 1.
Corrected the address pin (A18) in the TSOP Connection Diagram.
Modified the Program/Erase time in Table 11 – Program/Erase Performance.
Eliminated the max time for t
WHWH2
and updated t
WHWH1
and t
WHWH2
in Tables
9 and 10 -- Program/Erase AC Characteristics.
Eliminated t
WHWH3
in Table 10 - Program/Erase AC Characteristics.
Eliminated the chip-erase time from the Features section.
Modified Test Specification Table for Read
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV800T90TIP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800T90TP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800BB-55RBC | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800BB-55RBCP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
| EN2-B1H1S | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
| EN2-B1H1ST | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
| EN2-B1H1T | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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