Copyright Cirrus Logic, Inc. 2011 (All Rights Reserved) 13 EP7311 High-Performance, Low-Power S" />
參數(shù)資料
型號: EP7311-IR-90
廠商: Cirrus Logic Inc
文件頁數(shù): 5/42頁
文件大?。?/td> 0K
描述: IC ARM720T MCU 90MHZ 204-TFBGA
標(biāo)準(zhǔn)包裝: 119
系列: EP7
核心處理器: ARM7
芯體尺寸: 32-位
速度: 90MHz
連通性: 編解碼器,EBI/EMI,IrDA,鍵盤,多媒體編解碼器,SPI/Microwire1,UART/USART
外圍設(shè)備: LCD,LED,MaverickKey,PWM
輸入/輸出數(shù): 27
程序存儲器類型: ROMless
RAM 容量: 56K x 8
電壓 - 電源 (Vcc/Vdd): 2.3 V ~ 2.7 V
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 204-TFBGA
包裝: 托盤
其它名稱: 598-1229
DS506F2
Copyright Cirrus Logic, Inc. 2011
(All Rights Reserved)
13
EP7311
High-Performance, Low-Power System on Chip
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
Recommended Operating Conditions
DC Characteristics
All characteristics are specified at VDDCORE = 2.5 V, VDDIO = 3.3 V and VSS = 0 V over an operating temperature of 0°C to +70°C
for all frequencies of operation. The current consumption figures have test conditions specified per parameter.”
DC Core, PLL, and RTC Supply Voltage
2.9 V
DC I/O Supply Voltage (Pad Ring)
3.6 V
DC Pad Input Current
10 mA/pin; 100 mA cumulative
Storage Temperature, No Power
–40
C to +125C
DC core, PLL, and RTC Supply Voltage
2.5 V
0.2 V
DC I/O Supply Voltage (Pad Ring)
2.3 V - 3.5 V
DC Input / Output Voltage
O–I/O supply voltage
Operating Temperature
Extended -20
C to +70C; Commercial 0C to +70C;
Industrial -40
C to +85C
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
VIH
CMOS input high voltage
0.65
V
DDIO
-
VDDIO + 0.3
V
VDDIO = 2.5 V
VIL
CMOS input low voltage
VSS 0.3
-
0.25
V
DDIO
V
VDDIO = 2.5 V
VT+
Schmitt trigger positive going
threshold
--
2.1
V
VT-
Schmitt trigger negative going
threshold
0.8
-
V
Vhst
Schmitt trigger hysteresis
0.1
-
0.4
V
VIL to VIH
VOH
CMOS output high voltagea
Output drive 1a
Output drive 2a
VDD – 0.2
2.5
-
V
IOH = 0.1 mA
IOH = 4 mA
IOH = 12 mA
VOL
CMOS output low voltagea
Output drive 1a
Output drive 2a
-
0.3
0.5
V
IOL = –0.1 mA
IOL = –4 mA
IOL = –12 mA
IIN
Input leakage current
-
1.0
A
VIN = VDD or GND
IOZ
Bidirectional 3-state leakage
currentb c
25
-
100
A
VOUT = VDD or GND
CIN
Input capacitance
8
-
10.0
pF
COUT
Output capacitance
8
-
10.0
pF
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