參數(shù)資料
型號: EPM2210F256A3N
廠商: ALTERA CORP
元件分類: PLD
英文描述: FLASH PLD, PBGA256
封裝: 17 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-256
文件頁數(shù): 80/108頁
文件大?。?/td> 1342K
代理商: EPM2210F256A3N
Altera Corporation
5–3
July 2008
MAX II Device Handbook, Volume 1
DC and Switching Characteristics
Programming/Erasure Specifications
Table 5–3 shows the MAX II device family programming/erasure
specifications.
TJ
Operating junction temperature
Commercial range (5)
085
°C
Industrial range
–40
100
°C
Extended range (6)
–40
125
°C
Notes to Table 5–2
:
(1)
MAX II device in-system programming and/or user flash memory (UFM) programming via JTAG or logic array
is not guaranteed outside the recommended operating conditions (for example, if brown-out occurs in the system
during a potential write/program sequence to the UFM, users are recommended to read back UFM contents and
verify against the intended write data).
(2)
Minimum DC input is –0.5 V. During transitions, the inputs may undershoot to –2.0 V for input currents less than
100 mA and periods shorter than 20 ns.
(3)
During transitions, the inputs may overshoot to the voltages shown in the following table based upon input duty
cycle. The DC case is equivalent to 100% duty cycle. For more information about 5.0-V tolerance, refer to the Using
MAX II Devices in Multi-Voltage Systems chapter in the MAX II Device Handbook.
VIN
Max. Duty Cycle
4.0 V
100% (DC)
4.1
90%
4.2
50%
4.3
30%
4.4
17%
4.5
10%
(4)
All pins, including clock, I/O, and JTAG pins, may be driven before VCCINT and VCCIO are powered.
(5)
MAX IIZ devices are only available in the commercial temperature range.
(6)
For the extended temperature range of 100 to 125 C, MAX II UFM programming (erase/write) is only supported
via the JTAG interface. UFM programming via the logic array interface is not guaranteed in this range.
Table 5–2. MAX II Device Recommended Operating Conditions (Part 2 of 2)
Symbol
Parameter
Conditions
Minimum
Maximum
Unit
Table 5–3. MAX II Device Programming/Erasure Specifications
Parameter
Minimum
Typical
Maximum
Unit
Erase and reprogram cycles
100 (1)
Cycles
Note to Table 5–3
(1)
This specification applies to the UFM and configuration flash memory (CFM) blocks.
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