參數(shù)資料
型號(hào): F1040
廠商: Polyfet RF Devices
英文描述: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁數(shù): 1/2頁
文件大?。?/td> 32K
代理商: F1040
RF CHARACTERISTICS ( WATTS OUTPUT )
40
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOS TRANSISTOR
40Watts Push - Pull
Package Style AD
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
170Watts
1.05
C
o
200
-65
to 150
8 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
dB
%
Relative
13
60
0.8
20:1
Idq =
Idq =
Idq =
0.8
0.8
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 400 MHz
F = 400 MHz
F = 400 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
65
2
1
7
1
1.6
0.7
11
66
8
40
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.1
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.2
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 8
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
C
o
C
o
C/W
o
F1040
polyfet rf devices
8/1/97
相關(guān)PDF資料
PDF描述
F1058 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1060 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1063 CONN RECEPT 150POS 1MM DUAL SMD
F1065 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1066 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F104-01386-000 制造商:Ocular 功能描述: 制造商:Ocular LCD Inc 功能描述:
F104-01386-099 制造商:Ocular 功能描述:
F104-01386-100 制造商:Ocular 功能描述: 制造商:Ocular LCD Inc 功能描述:
F104-01386-199 制造商:Ocular LCD Inc 功能描述:Touch Screen Capacitive 10.4in 90% 14-Pin 制造商:Ocular 功能描述:
F1042-1P 功能描述:D-Sub工具與硬件 9P DUSTCOVER RED RoHS:否 制造商:3M Electronic Solutions Division 產(chǎn)品:Accessories 類型:Strain Relief, 36 Position 用于:Wiremount D-Sub Connectors