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| 型號： | F49L004BA |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| 中文描述： | 4兆位（為512k × 8）3V時僅閃存的CMOS |
| 文件頁數(shù)： | 10/46頁 |
| 文件大?。?/td> | 371K |
| 代理商： | F49L004BA |
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EFS T
preliminary
F49L004UA / F49L004BA
Elite Flash Storage Technology Inc.
Publication Date : Aug. 2003
Revision: 0.2 10/46
Table 5. F49L004UA/ F49L004BA Software Command Definitions
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Command
Bus
Cycles
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset (5)
1
XXXH
F0H
-
-
-
-
-
-
-
-
-
-
Read (4)
1
RA
RD
-
-
-
-
-
-
-
-
-
-
Program
4
555H
AAH
2AAH
55H
555H
A0H
PA
PD
Chip Erase
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH
55H
555H
10H
Sector Erase
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH
55H
SA
30H
Sector Erase
Suspend (6)
1
XXXH
B0H
-
-
-
-
-
-
-
-
-
-
Sector Erase Resume
(7)
1
XXXH
30H
-
-
-
-
-
-
-
-
-
-
Auto-select
See Table 6.
Notes:
1. X = don’t care
RA = Address of memory location to be read.
RD = Data to be read at location RA.
PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector.
2. Except Read command and Auto-select command, all command bus cycles are write operations.
3. Address bits A18–A11 are don’t cares.
4. No command cycles required when reading array data.
5. The Reset command is required to return to reading array data when device is in the auto-select mode, or if
DQ5 goes high(while the device is providing status data).
6. The system may read and program in non-erasing sectors, or enter the auto-select mode, when in the Erase
Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
7. The Erase Resume command is valid only during the Erase Suspend mode.
Table 6. F49L004UA/ F49L004BA Auto-Select Command
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Command
Bus
Cycles
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
4
555H
AAH
2AAH
55H
555H
90H
X04H
7FH
-
-
-
-
4
555H
AAH
2AAH
55H
555H
90H
X08H
7FH
-
-
-
-
4
555H
AAH
2AAH
55H
555H
90H
X0CH
7FH
-
-
-
-
Manufacture ID
4
555H
AAH
2AAH
55H
555H
90H
X00H
8CH
-
-
-
-
Device ID, Upper
boot
Device ID, Bottom
boot
4
555H
AAH
2AAH
55H
555H
90H
X01H
B5H
-
-
-
-
4
555H
AAH
2AAH
55H
555H
90H
X01H
B6H
-
-
-
-
Sector Protect Verify
4
555H
AAH
2AAH
55H
555H
90H
(SA)
x02H
00H
01H
-
-
-
-
Notes :
1. The fourth cycle of the auto-select command sequence is a read cycle.
2. For Sector Protect Verify operation: If read out data is 01H, it means the sector has been protected. If read out
data is 00H, it means the sector is still not being protected.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F49L004BA-70N | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-90N | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-90T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
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