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參數(shù)資料
| 型號： | FAP-450 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直|第14A條（?。﹟對247VAR |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 222K |
| 代理商： | FAP-450 |
N-channel MOS-FET
500V
0,38
> Characteristics
FAP-450
FAP-IIS Series
14A
190W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source-On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=8A; V
GS
=10V; 80μs pulse test
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test;V
DS
=25V; T
ch
=25°C
↑
I
D
↑
R
D
]
↑
I
D
1
2
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=250μA; V
DS
=V
GS
↑
R
D
]
↑
g
f
↑
V
G
4
5
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Max. Avalanche Energy Derating
vs. Starting Channel Temperature
E
as
=f(starting T
ch
): Peak I
L
= 14A; V
CC
=50V
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; V
GS
=0V
↑
C
↑
E
↑
I
F
7
8
9
V
DS
[V]
→
Starting T
ch
[°C]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
P
D
=f(Tc)
Safe Operation Area
I
D
=f(V
DS
): Single Pulse, Tc=25°C
Transient Thermal impedance
Zth(ch-c=f(t); D=t/T
↑
P
D
10
↑
I
D
12
↑
Z
t
Z
thch
=f(t) parameter:D=t/T
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
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