參數(shù)資料
型號(hào)： FCH30A15
廠商： NIHON INTER ELECTRONICS CORP
元件分類： 整流器
英文描述： Schottky Barrier Diode
中文描述： 30 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： TO-220AB, FULL PACK-3
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 134K
代理商： FCH30A15
30A Avg.
Volts
SBD
150
FCH30A15
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
FCH30A15 (per Arm)
Tj=2 5
,V m = 20m V RMS,f= 100 kHz ,Ty pica l V alue
0.5
1
2
5
10
20
50
100
200
REVERSE VOLTAGE (V)
50
100
200
500
1000
JUNCTION
CAPACITANCE
(pF)
FORWARD CURRENT VS. VOLTAGE
FCH30A15 (per Arm)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE (V)
1
2
5
10
20
50
100
INSTANTANEOUS
FORWARD
CURRENT
(A)
Tj=25C
Tj=150C
AVERAGE REVERSE POWER DISSIPATION
FCH30A15 (Total)
040
80
120
160
REVERSE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
AVERAGE
REVERSE
POWER
DISSIPATION
(W)
RECT 180
SINE WAVE
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
FCH30A15 (Total)
V RM= 150V
025
5075
100
125
150
CASE TEMPERATURE (C )
0
5
10
15
20
25
30
35
AVERAGE
FORWARD
CURRENT
(A)
SINE WAVE
RECT 180
0
180
CONDUCTION ANGLE
θ
SURGE CURRENT RATINGS
FCH30A15
f=50Hz,Sine Wave,Non-Repetitive,No Load
0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
0
50
100
150
200
250
300
SURGE
FORWARD
CURRENT
(A)
0.02s
IFSM
AVERAGE FORWARD POWER DISSIPATION
05
10
15
20
25
30
35
AVERAGE FORWARD CURRENT (A)
0
5
10
15
20
25
30
AVERAGE
FORWARD
POWER
DISSIPATION
(W)
FCH30A15 (Total)
SINE WAVE
RECT 180
0
180
CONDUCTION ANGLE
θ
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
FCH30A15 (per Arm)
Tj= 150
040
80
120
160
PEAK REVERSE VOLTAGE (V)
10
20
50
100
PEAK
REVERSE
CURRENT
(mA)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FCH30B03L 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode
FCH30B10 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode
FCH30U15 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:Schottky Barrier Diode
FCH35N60 功能描述:MOSFET 600V N-Channel SuperFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCH47N60 功能描述:MOSFET 650V SUPER FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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