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參數(shù)資料
| 型號： | FCX789A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SILICON POWER (SWITCHING) TRANSISTOR |
| 中文描述： | 3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 169K |
| 代理商： | FCX789A |
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 -NOVEMBER 1998
FEATURES
*
*
*
*
Complimentary Type -
Partmarking Detail -
2W POWER DISSIPATION
8A Peak Pulse Current
Excellent H
Characteristics up to 10 Amps
Low Saturation Voltage E.g. 10mv Typ.
FCX688B
789
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-25
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current **
I
CM
-8
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25°C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions when soldering surface mount components.
C
B
C
E
FCX789A
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|---|---|
| FCX789ATA | 功能描述:兩極晶體管 - BJT PNP High Gain RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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