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參數(shù)資料
| 型號： | FCX790A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SILICON POWER (SWITCHING) TRANSISTOR |
| 中文描述： | 2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 78K |
| 代理商： | FCX790A |
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-50
V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-40
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100 A
Collector Cut-Off Current
I
CBO
I
EBO
V
CE(sat)
-0.1
A
V
CB
=-30V
V
EB
=-4V
I
C
=-0.5A, I
=-5mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-50mA*
I
C
=-1A, I
B
=-10mA*
Emitter Cut-Off Current
-0.1
A
Collector-Emitter Saturation
Voltage
-250
-350
-450
mV
mV
mV
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
V
I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
250
200
150
800
I
C
=-10mA, V
CE
=-2V
I
C
=-500mA, V
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
=-50mA, V
CE
=-5V
f=50MHz
Transition Frequency
f
T
100
MHz
Input Capacitance
C
ibo
C
obo
t
on
t
off
225
pF
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
Output Capacitance
24
pF
Switching Times
35
600
ns
ns
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
FCX790A
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| FCX790ATA | 功能描述:兩極晶體管 - BJT PNP High Gain RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| FCX-MQ-F-AC | 制造商:FUJIKURA 制造商全稱:FUJIKURA 功能描述:Oxygen sensor module |
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