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參數(shù)資料
| 型號： | FD120H03A5F |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 147K |
| 代理商： | FD120H03A5F |
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).
2. CONTROLLING DIMENSION (INCH):
3. DIMENSIONS AND TOLERANCES:
a = 3.05 +0, - 0.01
(120 +0, - 0.4)
b = 3.05 +0, - 0.01
(120 +0, - 0.4)
c = 2.61 +0, - 0.01
(102.8 +0, - 0.4)
d = 2.61 +0, - 0.01
(102.8 +0, - 0.4)
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
5. SAWING:
Recommended Blade
SEMITEC S1025 QS00 Blade
300V
VF = 1.25V
(max.)
5" Wafer
FD120H03A5B
FRED Die in Wafer Form
Note:
The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured
using IR’s established processes. Programs for customer-specified testing are available upon request. IR has
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.
Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a
number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard
package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms
and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which
are available upon request.
Part number shown is for die in waveform. Contact factory for these other options.
100% Tested at Probe
Available in Tape and Reel (upon request),
Chip Pack, and Sawn on Film
I - 0522J
rev. A
09/05/06
Nominal Back Metal Composition, Thickness:
Cr-Ni-Ag ( 1kA-2kA-3kA)
Nominal Front Metal Composition, Thickness:
99%Al, 1%Si (3
m)
Dimensions:
0.120" x 0.120" (see drawing)
Wafer Diameter:
125 mm
Wafer Thickness:
14 m
ils
Scribe Line Width
56 ±10 m
Reject Ink Dot Size
0.25 mm Diameter Minimum
Recommended Storage Environment:
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Die Attach Conditions:
For optimum electrical results, die attach
temperature should not exceed 300 °C
Reference Package
15ETH03 Series
Mechanical Data
Die Outline
Electrical Characteristics
Parameter
Description
Min
Typ
Max
Test Conditions
VFM
Maximum Forward Voltage
–––
1.25V
TJ = 25°C, IF = 15A
VRRM
Minimum Reverse Breakdown Voltage
300V
–––
TJ = 25°C, IRRM = 100A
IRM
Max. Reverse Leakage Current
–––
40A
TJ = 25°C, VRRM = 300V
trr
Typ. Reverse Recovery Time
–––
32 ns
–––
IF = 15A, di/dt = 200A/s, VR = 200V
40 (1.57)
125 (4.92)
a
d
0.35 ± 0.01
C
A
c
b
(14 ± 0.4)
Wafer flat alligned with
side b of the die
Document Number: 93770
www.vishay.com
1
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