參數(shù)資料
型號(hào): FD401R17KF6CB2V
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 106K
代理商: FD401R17KF6CB2V
Technische Information / Technical Information
FD 401 R 17 KF6C B2
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
= 25°C
V
CES
1700
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80 °C
I
C,nom.
400
A
T
C
= 25 °C
I
C
650
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80°C
I
CRM
800
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25°C, Transistor
P
tot
3,1
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
400
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
800
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
45
kA
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I
C
= 400A, V
GE
= 15V, T
vj
= 25°C
V
CE sat
-
2,6
3,1
V
I
C
= 400A, V
GE
= 15V, T
vj
= 125°C
-
3,1
3,6
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 30mA , V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
4,5
5,5
6,5
V
Gateladung
gate charge
V
GE
= -15V ... +15V
Q
G
-
4,8
-
μC
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
27
-
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
-
1,3
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 1700V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
-
5
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: Alfons Wiesenthal
date of publication: 28.03.2001
approved by: Christoph Lübke; 12.04.2001
revision: 2 (preliminary)
1(8)
FD401R17KF6CB2_V.xls
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