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參數(shù)資料
| 型號(hào)： | FD500JV-90DA |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Card Edge Connector; Number of Contacts:98; Pitch Spacing:1mm; Tail Length:2.30mm; Contact Termination:Solder; Connector Mounting:PC Board; Contact Material:Phosphor Bronze; Contact Plating:Tin; Leaded Process Compatible:Yes |
| 中文描述： | 高功率，高頻率，按包裝類(lèi)型 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | FD500JV-90DA |
Feb.1999
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Reverse recovery loss
Soft recovery rate
Forward recovery voltage
Thermal resistance
MITSUBISHI SOFT RECOVERY DIODES
FD500JV-90DA
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
I
RRM
V
FM
Q
RR
Erec
tb/ta
V
FP
R
th(j-f)
mA
V
μ
C
J/P
—
V
°
C/W
Symbol
Parameter
Test conditions
Limits
Typ.
—
—
—
4.0
2
100
—
Min.
—
—
—
—
—
—
—
Max.
80
3.5
1500
—
—
—
.027
Unit
ELECTRICAL CHARACTERISTICS
V
RM
= 4500V, T
j
= 125
°
C
I
FM
= 1570A, T
j
= 125
°
C
I
FM
= 500A, d
i
/d
t
= 1000A/
μ
s, V
R
= 2250V, T
j
= 125
°
C
(Refer to Fig. 1 and Fig. 2)
d
i
/d
t
= 1000A/
μ
s, T
j
= 25
°
C
Junction to fin
Fig. 1 (Definition of reverse recovery waveform)
Fig. 2 (Reverse recovery test circuit)
Note 1
In case of 2000A/
μ
s, definition of d
i
/d
t
is by VD and inductance value of L (line) as follows.
d
i
/d
t
= VD/L (line) = 2250V/1.125
μ
H = 2000A/
μ
s
0
IFM
d
i
/d
t
(0~50%IFM) (Note 1)
50%IFM
50%IRM
90%IRM
Q
RR
= (trr
×
IRM)/2
trr
ta
tb
IRM
d
i
/d
t
= VD/L(line) = 2250V/1.125
μ
H = 2000A (Note 1)
L(line)
VD = 2250V
GCT
L(load)
FD500JV
CD
i
Cc : 6
μ
F
Rc = 2
Cc
Rc
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