參數(shù)資料
型號(hào): FD6R16K4
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 2/4頁
文件大?。?/td> 124K
代理商: FD6R16K4
IGBT-Module
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
Kollektor-Dauergleichstrom
Periodischer Kollektor Spitzenstrom
Gesamt-Verlustleistung
Gate-Emitter-Spitzenspannung
Dauergleichstrom
Periodischer Spitzenstrom
Isolations-Prüfspannung
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sttigungsspannung
FD 600 R 16 KF4
collector-emitter voltage
DC-collector current
repetitive peak collector current
total power dissipation
gate-emitter peak voltage
DC forward current
repetitive peak forw. current
insulation test voltage
V
CES
I
C
I
CRM
P
tot
V
GE
I
F
I
FRM
V
ISOL
1600 V
600 A
1200 A
3900 W
± 20 V
600 A
1200 A
3,4 kV
t
p
=1 ms
t
C
=25°C, Transistor /transistor
t
p
=1ms
RMS, f=50 Hz, t= 1 min.
min.
typ.
3,5
4,6
5,5
90
max.
3,9 V
5 V
6,5 V
collector-emitter saturation voltage
i
C
=600A, v
GE
=15V, t
vj
=25°C
i
C
=600A, v
GE
=15V, t
vj
=125°C
i
C
=40mA, v
CE
=v
GE
, t
vj
=25°C
f
O
=1MHz,t
vj
=25°C,v
CE
=25V, v
GE
=0V
v
CE
=1600V, v
GE
=0V, t
vj
=25°C
v
CE
=1600V, v
GE
=0V, t
vj
=125°C
v
CE
=0V, v
GE
=20V, t
vj
=25°C
v
CE
=0V, v
EG
=20V, t
vj
=25°C
i
C
=600A,v
CE
=900V,v
L
=±15V
v
L
=±15V, R
G
=3,3
, t
vj
=25°C
v
L
=±15V, R
G
=3,3
, t
vj
=125°C
i
C
=600A,v
CE
=900V,v
L
=±15V
v
L
=±15V, R
G
=3,3
, t
vj
=25°C
v
L
=±15V, R
G
=3,3
, t
vj
=125°C
i
C
=600A,v
CE
=900V,v
L
=±15V
v
L
=±15V, R
G
=3,3
, t
vj
=25°C
v
L
=±15V, R
G
=3,3
, t
vj
=125°C
v
CE sat
-
-
Gate-Schwellenspannung
Eingangskapazitt
Kollektor-Emitter Reststrom
gate threshold voltage
input capacity
collector-emitter cut-off current
v
GE(TO)
C
ies
i
CES
4,5
-
-
-
-
-
- nF
- mA
- mA
4
40
Gate-Emitter Reststrom
Emitter-Gate Reststrom
Einschaltzeit (induktive Last)
gate leakage current
gate leakage current
turn-on time (inductive load)
i
GES
i
EGS
t
on
-
-
400 nA
400 nA
-
-
0,8
- μs
- μs
1
Speicherzeit (induktive Last)
storage time (inductive load)
t
s
-
-
1,1
1,3
- μs
- μs
Fallzeit (induktive Last)
fall time (inductive load)
t
f
-
-
0,25
0,3
- μs
- μs
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
i
C
=600A,v
CE
=900V,v
L
=±15V
R
G
=3,3
, t
vj
=125°C, L
S
=70nH
i
C
=600A,v
CE
=900V,v
L
=±15V
R
G
=3,3
, t
vj
=125°C, L
S
=70nH
E
on
-
240
- mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
E
off
-
140
- mWs
Inversdiode / Inverse diode
Durchlaspannung
forward voltage
i
F
=600A, v
GE
=0V, t
vj
=25°C
i
F
=600A, v
GE
=0V, t
vj
=125°C
i
F
=600A, -di
F
/dt=3kA/μs
v
RM
=900V, v
EG
=10V, t
vj
=25°C
v
RM
=900V, v
EG
=10V, t
vj
=125°C
i
F
=600A, -di
F
/dt=3kA/μs
v
RM
=900V, v
EG
=10V, t
vj
=25°C
v
RM
=900V, v
EG
=10V, t
vj
=125°C
v
F
-
-
2,4
2,2
2,8 V
- V
Rückstromspitze
peak reverse recovery current
I
RM
-
-
230
320
- A
- A
Sperrverzgerungsladung
recovered charge
Q
r
-
-
50
110
- μAs
- μAs
1) Hchstzulssiger diF/dt-Wert / Maximum rated diF/dt-value
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
Transistor, DC, pro Zweig / per arm
Diode /diode, DC, pro Modul / per module
Diode /diode, DC, pro Zweig / per arm
pro Module / per Module
pro Zweig / per arm
R
thJC
0,032 °C/W
0,04 °C/W
0,08 °C/W
0,008 °C/W
0,016 °C/W
150 °C
-40...+125 °C
-40...+125 °C
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
R
thCK
Hchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
Mechanische Eigenschaften / Mechanical properties
max. junction temperature
operating temperature
storage temperature
t
vj max
t
c op
t
stg
Innere Isolation
Anzugsdrehmoment f. mech. Befestigung / mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse / terminal connection torque
internal insulation
Al
2
O
3
terminals M6
terminals M4
terminals M8
M1
M2
3 Nm
2 Nm
8...10 Nm
ca. 1500 g
Gewicht
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehrigen Technischen Erluterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid
in
Bedingung für den Kurzschluschutz / Conditions for short-circuit protection
t
fg
= 10 μs
V
CC
= 1000 V
v
L
= ±15V
v
CEM
= 1300 V
R
GF
= R
GR
= 3,3
i
CMK1
6000 A
t
vj
= 125°C
i
CMK2
4500 A
Unabhngig davon gilt bei abweichenden Bedingungen / with regard to other conditions
v
weight
G
CEM
= V
CES
- 20nH x |di
c
/dt|
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