參數(shù)資料
型號: FDA20N50
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 500V N-Channel MOSFET
中文描述: 22 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, TO-3P, 3 PIN
文件頁數(shù): 4/9頁
文件大?。?/td> 324K
代理商: FDA20N50
4
www.fairchildsemi.com
FDA20N50 Rev. B
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
1.5
2.0
2.0
2.5
2.5
3.0
3.0
* Notes :
1. V
= 10 V
D
= 5.5 A
* Notes :
1. V
GS
= 10 V
2. I
D
= 11 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
150
200
0.0
0.5
1.0
R
D
,
D
T
J
, Junction Temperature [
o
C]
25
50
75
100
125
150
0
5
10
15
20
25
I
D
,
T
C
, Case Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
100 ms
1 ms
10
μ
s
DC
10 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
10
-5
10
-4
1 0
-3
1 0
-2
10
-1
1 0
0
1 0
1
10
-2
10
-1
1 0
0
* N o te s :
1 . Z
θ
JC
(t) = 0 .4 4
o
C /W M ax.
2 . D u ty F a cto r, D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
θ
JC
(t)
sin gle pulse
D = 0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
J
(
t
1
, S q u a re W a ve P u lse D u ra tion [sec]
t
1
P
DM
t
2
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