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參數(shù)資料
| 型號(hào)： | FDB15N50 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET |
| 中文描述： | 15 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 194K |
| 代理商： | FDB15N50 |
2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2
F
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25
°
C (unless otherwise noted)
Statics
B
VDSS
Dynamics
g
fs
Q
g(TOT)
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
Avalanche Characteristics
E
AS
I
AR
Avalanche Current
Drain-Source Diode Characteristics
Continuous Source Current
(Body Diode)
Pulsed Source Current
1
(Body Diode)
V
SD
Source to Drain Diode Voltage
t
rr
Reverse Recovery Time
Q
RR
Reverse Recovered Charge
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T
J
= 25
°
C, L = 7.0mH, I
AS
= 15A
Device Marking
FDH15N50
FDP15N50
FDB15N50
Device
FDH15N50
FDP15N50
FDB15N50
Package
TO-247
TO-220
TO-263
Reel Size
Tube
Tube
330mm
Tape Width
-
-
24mm
Quantity
30
50
800
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250μA, V
GS
= 0V
Reference to 25
o
C,
ID = 1mA
V
GS
= 10V, I
D
= 7.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V
V
GS
= 0V
V
GS
= ±30V
500
-
-
V
B
VDSS
/
T
J
Breakdown Voltage Temp. Coefficient
-
0.58
-
V/
°
C
r
DS(ON)
V
GS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
-
0.33
3.4
-
-
-
0.38
4.0
25
250
±100
V
2.0
-
-
-
I
DSS
Zero Gate Voltage Drain Current
T
C
= 25
o
C
T
C
= 150
o
C
μA
I
GSS
Gate to Source Leakage Current
nA
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain
“
Miller
”
Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DD
= 10V, I
D
= 7.5A
V
GS
= 10V,
V
DS
= 400V,
I
D
= 15A
10
-
-
-
-
-
-
-
-
-
-
-
-
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
33
7.2
12
9
5.4
26
5
1850
230
16
41
10
16
-
-
-
-
-
-
-
V
DD
= 250V,
I
D
= 15A,
R
G
= 6.2
,
R
D
= 17
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Single Pulse Avalanche Energy
2
760
-
-
-
-
mJ
A
15
I
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SD
= 15A
I
SD
= 15A, di
SD
/dt = 100A/μs
I
SD
= 15A, di
SD
/dt = 100A/μs
-
-
15
A
I
SM
-
-
60
A
-
-
-
0.86
470
5
1.2
730
6.6
V
ns
μC
D
G
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB15N50 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 500V 15A TO-263 |
| FDB15N50_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDB-15PF | 制造商:HRS 制造商全稱:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE |
| FDB-15SF | 制造商:HRS 制造商全稱:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE |
| FDB16AN08A0 | 功能描述:MOSFET Discrete Auto N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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