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參數(shù)資料
| 型號： | FDB5686 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 60V N-Channel PowerTrench⑩ MOSFET |
| 中文描述： | 60V的N溝道MOSFET的的PowerTrench⑩ |
| 文件頁數(shù)： | 16/16頁 |
| 文件大?。?/td> | 440K |
| 代理商： | FDB5686 |
TRADEMARKS
ACEx
Bottomless
CoolFET
CROSSVOLT
E
2
CMOS
TM
FACT
FACT Quiet Series
FAST
FASTr
GTO
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failure to perform when properly used in accordance
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Advance Information
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Obsolete
This datasheet contains the design specifications for
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This datasheet contains final specifications. Fairchild
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SuperSOT-8
SyncFET
TinyLogic
UHC
VCX
HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
Rev. E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDB5690 | 60V N-Channel PowerTrenchTM MOSFET |
| FDP5690 | 60V N-Channel PowerTrenchTM MOSFET |
| FDB5800 | N-Channel Logic Level PowerTrench MOSFET |
| FDB6021P | 30V N-Channel PowerTrench MOSFET |
| FDP6021P | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB5690 | 功能描述:MOSFET 60V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB5800 | 功能描述:MOSFET 60V N-Ch Logic PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB5800_F085 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB600 | 制造商:DEC 制造商全稱:DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS |
| FDB601 | 制造商:DEC 制造商全稱:DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS |
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