參數(shù)資料
型號： FDB8447L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 40V N-Channel PowerTrench MOSFET
中文描述： 15 A, 40 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數(shù)： 4/6頁
文件大?。?/td> 347K
代理商： FDB8447L
F
M
FDB8447L Rev.C
www.fairchildsemi.com
4
Figure 7.
0
10
20
30
40
0
2
4
6
8
10
V
DD
= 30V
V
DD
= 10V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 20V
I
D
= 14A
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
3000
40
50
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
t
AV
, TIME IN AVALANCHE(ms)
1
10
100
1
10
T
J
= 25
o
C
T
J
= 125
o
C
I
A
,
20
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
T
C
, CASE TEMPERATURE
(
75
100
125
150
0
20
40
60
80
Limited by Package
R
θ
JC
= 2.1
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
o
C
)
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.1
1
10
100
0.1
1
10
100
100ms
10ms
1ms
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
I
D
,
VDS, DRAIN to SOURCE VOLTAGE (V)
300
Figure 12.
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
1000
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
50
T
c
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
--------------------
T
c
–
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關代理商/技術參數(shù)
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FDB8453LZ 功能描述:MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB86102LZ 功能描述:MOSFET 100V NCHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB86135 功能描述:MOSFET PWM PFC COMBO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8832 功能描述:MOSFET 30V N-CH Logic Level PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8832_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench?? MOSFET 30V, 80A, 2.1m??
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