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參數(shù)資料
| 型號： | FDFMA2P853 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 307K |
| 代理商： | FDFMA2P853 |
August 2005
F
2005 Fairchild Semiconductor Corporation
FDFMA2P853 Rev. C (W)
1
FDFMA2P853
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
Features
MOSFET:
-3.0 A, -20V. R
DS(ON)
= 120 m
@ V
GS
= -4.5 V
R
DS(ON)
= 160 m
@ V
GS
= -2.5 V
R
DS(ON)
= 240 m
@ V
GS
= -1.8 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
Schottky:
V
F
< 0.46 V @ 500 mA
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GSS
Parameter
Ratings
-20
±
8
-2.2
-6
20
1
1.4
0.7
-55 to +150
Units
V
V
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current (Note 1a)
Power dissipation for Single Operation (Note 1a)
Power dissipation for Single Operation (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
V
RRM
I
O
V
A
P
D
W
T
J
, T
STG
o
C
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ambient (Note 1b)
Thermal Resistance, Junction-to-Ambient (Note 1c)
Thermal Resistance, Junction-to-Ambient (Note 1d)
86
173
86
140
o
C/W
Device Marking
.853
Device
FDFMA2P853
Reel Size
7inch
Tape Width
8mm
Quantity
3000 units
5
1
6
2
3
4
MicroFET
C
A
G
NC D
S
PIN
C
G
S
A
NC
D
C
D
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| FDFMA2P857 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.0A, 120mohm |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDFMA2P853_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853T | 功能描述:MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA2P857 | 功能描述:MOSFET 20V P-Ch Shtky Diode PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA2P857_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ |
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