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參數(shù)資料
| 型號： | FDFS2P753AZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ |
| 中文描述： | 3 A, 30 V, 0.115 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 243K |
| 代理商： | FDFS2P753AZ |
tm
July 2007
2007 Fairchild Semiconductor Corporation
FDFS2P753AZ Rev.B
www.fairchildsemi.com
1
F
FDFS2P753AZ
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
-30V, -3A, 115m
Features
Max r
DS(on)
= 115m
at V
GS
= -10V, I
D
= -3.0A
Max r
DS(on)
= 180m
at V
GS
= -4.5V, I
D
= -1.5A
V
F
< 0.45V @ 2A
V
F
< 0.28V @ 100mA
Schottky and MOSFET incorporated into single power surface
mount SO-8 package
Electrically independent Schottky and MOSFET pinout for
design flexibility
RoHS Compliant
General Description
The FDFS2P753AZ offers a single package solution for DC/DC
conversion. It combines an excellent Fairchild’s PowerTrench
MOSFET with a Schottky diode in an SO-8 package. The
MOSFET features a low on-state resistance and an optimized
gate charge to achieve fast switching. The independently
connected Schottky diode has a low forward voltage drop to
minimize power loss. This device is an Ideal DC-DC solution for
up to 3A peak load current.
Applications
DC - DC Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
I
D
Parameter
Ratings
-30
±25
-3
-16
3.1
1.6
6
30
2
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Single Pulse Avalanche Energy (Note 2)
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Operating and Storage Junction Temperature Range
A
P
D
W
E
AS
V
RRM
I
O
T
J
, T
STG
mJ
V
A
°C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case (Note 1)
Thermal Resistance, Junction to Ambient (Note 1a)
40
78
°C/W
Device Marking
FDFS2P753AZ
Device
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
FDFS2P753AZ
D
C
C
D
Pin 1
SO-8
G
A
A
S
G
A
A
S
D
D
C
C
5
6
7
8
3
2
1
4
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| FDFS2P753Z | Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDFS2P753AZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ |
| FDFS2P753Z | 功能描述:MOSFET -30V -3A 115 OHM PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N303 | 功能描述:MOSFET N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N303_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET with Schottky Diode |
| FDFS6N548 | 功能描述:MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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