參數(shù)資料
型號(hào)： FDG6313N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual N-Channel, Digital FET
中文描述： 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC70-6
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 58K
代理商： FDG6313N
April 2002
FDG63
1
3N
Dual N-Channel,
Digital FET
General Description
Features
*
The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
FDG63
1
3N
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
25
V
Gate-Source Voltage
V
Drain/Output Current
- Continuous
0.5
A
- Pulsed
1.5
P
D
T
J
,T
STG
ESD
Maximum Power Dissipation
(Note 1)
0.3
W
Operating and Storage Temperature Range
-55 to 150
°C
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100 pF / 1500
)
THERMAL CHARACTERISTICS
6.0
kV
R
θ
J A
Thermal Resistance, Junction-to-Ambient
415
°C/W
FDG6313N Rev.A
25 V, 0.50 A continuous, 1.5 A peak.
R
DS(ON)
= 0.45
@ V
GS
= 4.5 V,
R
DS(ON)
=0.60
@ V
GS
= 2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
GS(th)
< 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
These dual N-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223
SC70-6
SuperSOT
TM
-6
1 or 4
*
6 or 3
5 or 2
4 or 1
*
2 or 5
3 or 6
SC70-6
G1D2
S1
D1
S2
.
33
G2
- 0.5 to +8
相關(guān)PDF資料
PDF描述
FDG6316 P-Channel 1.8V Specified PowerTrench MOSFET
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FDG6318P CAP CER 1500PF 630V 10% X7R 1206
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDG6313N_NL 功能描述:MOSFET 25V Dual N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6314P 功能描述:MOSFET Dual PCh Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6316 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET
FDG6316P 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6316P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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