參數(shù)資料
型號: FDH3595
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: High Conductance Low Leakage Diode
中文描述: 0.2 A, SILICON, SIGNAL DIODE, DO-35
文件頁數(shù): 1/3頁
文件大?。?/td> 23K
代理商: FDH3595
F
FDH3595
DO-35
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501-1505 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
125
200
500
600
V
mA
mA
mA
1.0
4.0
A
A
°
C
°
C
T
stg
T
J
-65 to +175
175
Symbol
Characteristic
Max
Units
MMBD7000*
500
3.33
300
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
R
θ
JA
Discrete POWE R & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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