參數(shù)資料
型號： FDP5645
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： CONN RCPT .100 36POS GOLD T/H
中文描述： 83 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 2/10頁
文件大小： 422K
代理商： FDP5645
FDP5645/FDB5645 Rev. B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 40 V,
I
D
= 80 A
800
mJ
I
AR
Maximum Drain-Source Avalanche
Current
80
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
60
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
64
mV/
°
C
V
DS
= 48 V,
V
GS
= 20 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 1)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
2
4
V
Gate Threshold Voltage
-7.8
mV/
°
C
V
GS
= 10 V,
V
GS
=10V, I
D
= 40 A, T
=125
°
C
V
GS
= 6 V,
V
GS
= 10 V,
V
DS
= 5 V,
I
D
= 40 A
I
D
= 38 A
V
DS
= 10 V
I
D
= 40 A
8
13
9
9.5
18
11
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
60
A
S
88
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
4468
810
198
pF
pF
pF
V
DS
= 30 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
21
13
77
42
76
18
21
30
20
90
50
107
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 30 V,
V
GS
= 10 V
I
D
= 80 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
I
S
Maximum Pulsed Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
80
300
1.3
A
A
V
V
GS
= 0 V,
I
S
= 40 A
0.9
Notes:
1.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
2.
TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3.
Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
F
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FDP5645_Q 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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FDP5680_Q 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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