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參數(shù)資料
| 型號： | FDP65N06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V N-Channel MOSFET |
| 中文描述： | 65 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 607K |
| 代理商： | FDP65N06 |
2006 Fairchild Semiconductor Corporation
FDP65N06 Rev. A1
1
www.fairchildsemi.com
F
June 2006
UniFET
TM
FDP65N06
60V N-Channel MOSFET
Features
65A, 60V, R
DS(on)
= 0.016
@V
GS
= 10 V
Low gate charge ( typical 132nC)
Low Crss ( typical 35pF)
Fast switching
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
TO-220
FDP Series
G
S
D
Symbol
Parameter
FDP65N06
Units
V
DSS
I
D
Drain-Source Voltage
60
V
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
65
A
41
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
260
A
Gate-Source Voltage
±
20
V
Single Pulsed Avalanche Energy
(Note 2)
430
mJ
Avalanche Current
(Note 1)
65
A
Repetitive Avalanche Energy
(Note 1)
13.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
135
W
- Derate above 25°C
1.08
W/°C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
°C
T
L
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
300
°C
Symbol
Parameter
FDP65N06
Units
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
0.92
°C
/
W
Thermal Resistance, Junction-to-Ambient
62.5
°C
/
W
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