參數(shù)資料
型號(hào): FDS3601N
英文描述: TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 100V V(BR)DSS | 1.3A I(D) | SO
中文描述: 晶體管| MOSFET的|配對(duì)| N溝道| 100V的五(巴西)直| 1.3AI(四)|蘇
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 79K
代理商: FDS3601N
May 2001
PRELIMINARY
FDS3601N
100V Dual N-Channel PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDS3601N Rev B(W)
General Description
These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
1.3 A, 100 V. R
DS(ON)
= 480 m
@ V
GS
= 10 V
R
DS(ON)
= 530 m
@ V
GS
= 6 V
Fast switching speed
Low gate charge (3.7nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S2
SO-8
G2S1G1
D2
D2
D1
D1
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
100
±
20
1.3
6
2
1.6
1.0
0.9
–55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS3601N
FDS3601N
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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