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參數(shù)資料
| 型號： | FEP16JTHE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | FEP16JTHE3/45 |
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
Document Number: 88596
Revision: 07-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
Glass passivated chip junction
Ultrafast recovery time
Low switching losses, high efficiency
High forward surge capability
AEC Q101 qualified
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
inverters,
freewheeling
diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
8.0 A x 2
VRRM
50 V to 600 V
IFSM
200 A, 125 A
trr
35 ns, 50 ns
VF
0.95 V, 1.30 V, 1.50 V
TJ max.
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
FEP16xT
ITO-220AB
FEPF16xT
FEPB16xT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
16AT
FEP
16BT
FEP
16CT
FEP
16DT
FEP
16FT
FEP
16GT
FEP
16HT
FEP
16JT
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
350
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
500
600
V
Maximum average forward
rectified current at TC = 100 °C
IF(AV)
16
A
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load per diode
IFSM
200
125
A
Operating storage and temperature range
TJ, TSTG
- 55 to +150
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
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