參數(shù)資料
型號(hào)： FJX3904TF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： NPN Epitaxial Silicon Transistor
中文描述： 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： SOT-323, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 110K
代理商： FJX3904TF
2007 Fairchild Semiconductor Corporation
FJX3904 Rev. B
1
www.fairchildsemi.com
F
January 2007
FJX3904
NPN Epitaxial Silicon Transistor
General Purpose Transistor
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°
C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics*
T
a
= 25°C unless otherwise noted
Symbol
Parameter
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Symbol
Parameter
Value
Units
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
60
V
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6
V
Collector Current
200
mA
Collector Power Dissipation
350
mW
Storage Temperature
-55 ~ 150
°
C
Test Conditions
Min.
Max.
Units
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Collector-Base Breakdown Voltage
I
C
=10
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CB
=5V, I
E
=0, f=1MHz
V
CE
=20V, I
C
=10mA
I
C
=100
μ
A, V
CE
=5V, R
S
=1K
f=10Hz to 15.7KHz
60
V
* Collector-Emitter Breakdown Voltage
40
V
Emitter-Base Breakdown Voltage
6
V
Collector Cut-off Current
50
nA
* DC Current Gain
40
70
100
60
30
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.2
0.3
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
0.65
0.85
0.95
V
V
C
ob
f
T
NF
Output Capacitance
4
pF
Current Gain Bandwidth Product
300
MHz
Noise Figure
5
dB
t
ON
Turn On Time
V
CC
=3V, V
BE
=0.5V
I
C
=10mA, I
B1
=1mA
V
CC
=3V, I
C
=10mA
I
B1
=I
B2
=1mA
70
ns
t
OFF
Turn Off Time
250
ns
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
相關(guān)PDF資料
PDF描述
FJX3904 General Purpose Transistor
FJX3906 General Purpose Transistor
FJX4001R PNP Epitaxial Silicon Transistor For Switching Application(開(kāi)關(guān)型的PNP硅外延晶體管)
FJX4002R Switching Application
FJX4003R Switching Application
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FJX3906 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Transistor
FJX3906TF 功能描述:兩極晶體管 - BJT PNP/40V/0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FJX3906TF_Q 功能描述:兩極晶體管 - BJT PNP/40V/0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FJX4001R 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Switching Application
FJX4001RTF 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 PNP Si Transistor Epitaxial RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*