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1
Edition 1.3
July 2004
FLD3F10NP-A
FEATURES
Modulator Integrated DFB Laser Diode Module
CW operation of DFB laser section
Modulation voltage applied only to modulator section
High speed butterfly package with GPO connection
Built-in optical isolator, monitor photodiode, thermistor, and
thermo-electric cooler
APPLICATION
This MI laser is intended for intermediate reach applications
(
≤24km) at 10Gb/s.
DESCRIPTION
The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator
monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation
voltage is applied to the modulator section while the laser section operates CW allowing extremely
low wavelength chirping. Extinction ratios of more than 8.2 dB can be achieved with 2.6 Vp-p
modulation. The MI laser is installed in a butterfly type package. The module incorporates a highly
stable optical coupling system. The module includes an optical isolator, monitor photodiode,
thermistor and a thermoelectric cooler.
Parameter
Symbol
Storage Temperature
Tstg
+85
-
°C
-40
Operating Case Temperature
+70
-
°C
Top
0
Optical Output Power
5
CW
mW
Pf
-
Laser Forward Current
150
CW
mA
IF
-
Laser Reverse Voltage
2
CW
V
VR
-
Modulator Forward Voltage
+1
CW
V
Vm
-5
Photodiode Forward Current
1
-mA
--
10
-V
Photodiode Reverse Voltage
VDR
-
10
260
°C
sec
Lead Soldering Time
--
TEC Voltage
+2.5
Cooling
-
Heating
V
Vc
-
-2.0
TEC Current
+1.4
Cooling
-
Heating
A
Ic
-
-0.7
Thermistor Temperature
+70
0
ATC Operation
°C
Tth
Rating
Unit
Min.
Max.
ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified)
Condition
1,310nm Modulator
Integrated DFB Laser