參數(shù)資料
型號(hào): FLM3439-25F
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: C-Band Internally Matched FET
中文描述: C波段內(nèi)部匹配場(chǎng)效應(yīng)管
文件頁數(shù): 2/4頁
文件大小: 296K
代理商: FLM3439-25F
2
FLM3439-25F
C-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 3.9 GHz
f2 = 3.91 GHz
2-tone test
21
23
25
27
29
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
37
39
41
35
33
31
-50
-40
-30
-20
-10
O
IM3
Pout
I
POWER DERATING CURVE
40
80
100
60
20
0
50
Case Temperature (
°
C)
100
150
200
T
OUTPUT POWER vs. FREQUENCY
3.4
3.65
3.9
Frequency (GHz)
44
46
42
40
O
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS = 10V
f = 3.65 GHz
24
26
28
30
32
34
Input Power (dBm)
42
44
40
38
36
30
45
15
O
η
add
Pout
η
a
Pin=34.5dBm
31.5dBm
29.5dBm
27.5dBm
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