- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375832 > FLU17XM (SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.) L-Band Medium & High Power GaAs FET PDF資料下載
參數(shù)資料
| 型號(hào)： | FLU17XM |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L波段中等 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | FLU17XM |
1
Edition 1.2
July 1999
FLU17XM
L-Band Medium & High Power GaAs FET
Item
Drain-Source Voltage
V
Gate-Source Voltage
V
Total Power Dissipation
Storage Temperature
Channel Temperature
W
°
C
°
C
Symbol
VDS
VGS
PT
Tstg
Tch
15
-5
7.5
-65 to +175
+175
Rating
Tc = 25
°
C
Condition
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain - source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with
gate resistance of 200
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power Added Efficiency
Thermal Resistance
Case Style:
XM
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Symbol
I
DSS
V
GSO
-
300
-
-
600
900
-1.0
-2.0
-3.5
-5
-
-
31.5
32.5
-
12.5
13.5
-
-
46
-
-
15
20
V
DS
= 5V, V
GS
=0V
V
DS
= 5V, I
DS
=400mA
V
DS
= 5V, I
DS
=30mA
I
GS
= -30
μ
A
Channel to Case
G.C.P.: Gain Compression Point
V
DS
= 10V
f=2.0 GHz
I
DS
=0.6I
DSS
mA
mS
V
dB
dBm
V
°
C/W
%
gm
V
p
P
1dB
G
1dB
η
add
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
FEATURES
High Output Power: P1dB=32.5dBm (Typ.)
High Gain: G1dB=13.5dB (Typ.)
High PAE:
η
add=46% (Typ.)
Hermetic Metal/Ceramic (SMT) Package
Tape and Reel Available
DESCRIPTION
The FLU17XM is a GaAs FET designed for base station applications in the
PCN/PCS frequency range. This is a new product series that uses a surface
mount package that has been optimized for high volume cost driven applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLU17ZM | L-Band Medium & High Power GaAs FET |
| FLU35XM | L-Band Medium & High Power GaAs FET |
| FLX107MH-12 | X, Ku Band Power GaAs FET |
| FLX207MH-12 | X, Ku Band Power GaAs FET |
| FLX600A | SDH TRANSPORT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLU17ZM | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:L-Band Medium & High Power GaAs FET |
| FLU200D | 制造商:Electrolube 功能描述:FLUXCLENE, 200ML, AEROSOL |
| FLU2-20-1AD | 制造商:SL POWER ELECTRONICS INC.- AULT 功能描述:AC/DC Power Supply Dual-OUT 5V/12V 3A/1A 20W |
| FLU2-40-1AD | 制造商:SL POWER ELECTRONICS INC.- AULT 功能描述:AC/DC Power Supply Dual-OUT 5V/12V 5A/3A 40W 10-Pin |
| FLU2-40-1ADR | 制造商:SL Power Electronics / Condor 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。