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參數(shù)資料
| 型號： | FM180-MH |
| 廠商： | 美麗微半導體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 79K |
| 代理商： | FM180-MH |
0.1
1.0
.01
10
50
RATING AND CHARACTERISTIC CURVES (FM120-MH THRU FM1100-MH)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.4-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0.2
0.4
0.6
0.8
1.0
1.2
350
300
250
200
150
100
50
0
.01 .05 .1 .5 1 5 10 50 100
.1 .3 .5 .7 .9 1.1 1.3 1.5
3.0
.1
1.0
10
100
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
REVERSE LEAKAGE CURRENT, (mA)
0 20 40 60 80 100 120 140
.01
Tj=75 C
FM120-MH~FM140-MH
FM150-MH~FM1100-MH
FM150-MH~FM160-MH
FM180-MH~FM1100-MH
FM120-MH~FM140-MH
Tj=25 C
Tj=25 C
AMBIENT TEMPERATURE,( C)
0
0
20
40
60
80
100
120
140
160
180
200
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
PEAK FORWARD SURGE CURRENT,(A)
0
10
5
15
25
20
相關PDF資料 |
PDF描述 |
|---|---|
| FM150-MH | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM160-MH | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM130-MH | CABLE ASSEM 2MM 50POS F-F 6,1 |
| FM140-MH | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM1100-MH | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FM180-M-R | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM180-N | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM180-S | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM1812 | 制造商:BACO Controls Inc 功能描述: |
| FM1831 | 制造商:BACO Controls Inc 功能描述: |
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