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參數(shù)資料
| 型號： | FM1808 |
| 廠商： | Ramtron International Corp. |
| 英文描述： | 256Kb Bytewide FRAM Memory(256Kb寬字節(jié)FRAM存儲器) |
| 中文描述： | FRAM存儲器的256Kb Bytewide（256Kb的寬字節(jié)的FRAM存儲器） |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | FM1808 |
Ramtron
FM1808-70
27 July 2000
7/12
Electrical Specifications
Absolute Maximum Ratings
Description
Ratings
-40
°
C to + 85
°
C
-1.0V to +7.0V
300
°
C
Ambient storage or operating temperature
Voltage on any pin with respect to ground
Lead temperature (Soldering, 10 seconds)
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only, and the functional operation of the device at these or any other conditions above those listed in
the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for
extended periods may affect device reliability
DC Operating Conditions
TA = -40
°
C to + 85
°
C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
Parameter
Min
VDD
Power Supply
4.5
IDD
VDD Supply Current 180 ns cycle
IDD
VDD Supply Current 120 ns cycle
ISB
Standby Current - TTL
ISB
Standby Current - CMOS
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
-1.0
VIH
Input High Voltage
2.0
VOL
Output Low Voltage
VOH
Output High Voltage
2.4V
Notes
1. Referenced to VSS.
2. VDD = 5.5V, /CE cycling at minimum cycle time, 130 ns for –70 and 180 ns for -120. All inputs at CMOS levels, all
outputs unloaded.
3. VDD = 5.5V, /CE at VIH, All inputs at TTL levels, all outputs unloaded.
4. VDD = 5.5V, /CE at VIH, All inputs at CMOS levels, all outputs unloaded.
5. VIN, VOUT between VDD and VSS.
6. IOL = 4.2 mA
7. IOH = -2.0 mA
Typ
5.0
7
12
7
Max
Units
V
mA
mA
μ
A
μ
A
μ
A
μ
A
V
V
V
V
Notes
5.5
15
25
400
20
10
10
0.8
VDD + 1.0
0.4
1
2
2
3
4
5
5
1
1
1,6
1,7
相關(guān)PDF資料 |
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| FM1808 | 4Kb FRAM Serial 3V Memory |
| FM1808-120-P | 4Kb FRAM Serial 3V Memory |
| FM1808-70-P | 4Kb FRAM Serial 3V Memory |
| FM1808-70-S | 4Kb FRAM Serial 3V Memory |
| FM200TU-07A | HIGH POWER SWITCHING USE INSULATED PACKAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM1808-120-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Kb Bytewide FRAM Memory |
| FM1808-120-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Kb Bytewide FRAM Memory |
| FM1808-70-P | 功能描述:F-RAM 256K (32Kx8) 70ns 5V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM1808-70-PG | 功能描述:F-RAM 256K (32Kx8) 70ns 5V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM1808-70-PG | 制造商:Ramtron International Corporation 功能描述:Nonvolatile SRAM Memory IC Memory Type:F |
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